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000032230 084__ $$2WoS$$aChemistry, Physical
000032230 084__ $$2WoS$$aPhysics, Condensed Matter
000032230 1001_ $$0P:(DE-Juel1)VDB26536$$aFilimonov, S.$$b0$$uFZJ
000032230 245__ $$a'Rotating' steps in Si(0 0 1) homoepitaxy
000032230 260__ $$aAmsterdam$$bElsevier$$c2004
000032230 300__ $$a31 - 36
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000032230 520__ $$aSteps on Si(001) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to "rotate" toward [110] directions during Si growth. This step "rotation" occurs due to a faceting of the step edges. A theoretical analysis of adatom incorporation into the steps shows that this kinetic instability may be caused by a suppressed mobility of the growing species along the SA step edge. (C) 2003 Elsevier B.V. All rights reserved.
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000032230 65320 $$2Author$$acomputer simulations
000032230 65320 $$2Author$$amodels of surface kinetics
000032230 65320 $$2Author$$amolecular beam epitaxy
000032230 65320 $$2Author$$ascanning tunneling microscopy
000032230 65320 $$2Author$$afaceting
000032230 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b1$$uFZJ
000032230 773__ $$0PERI:(DE-600)1479030-0$$a10.1016/j.susc.2003.11.033$$gVol. 549, p. 31 - 36$$p31 - 36$$q549<31 - 36$$tSurface science$$v549$$x0039-6028$$y2004
000032230 8567_ $$uhttp://dx.doi.org/10.1016/j.susc.2003.11.033
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000032230 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
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