TY  - JOUR
AU  - Filimonov, S.
AU  - Voigtländer, B.
TI  - 'Rotating' steps in Si(0 0 1) homoepitaxy
JO  - Surface science
VL  - 549
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - PreJuSER-32230
SP  - 31 - 36
PY  - 2004
N1  - Record converted from VDB: 12.11.2012
AB  - Steps on Si(001) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to "rotate" toward [110] directions during Si growth. This step "rotation" occurs due to a faceting of the step edges. A theoretical analysis of adatom incorporation into the steps shows that this kinetic instability may be caused by a suppressed mobility of the growing species along the SA step edge. (C) 2003 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000187894100004
DO  - DOI:10.1016/j.susc.2003.11.033
UR  - https://juser.fz-juelich.de/record/32230
ER  -