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| 100 | 1 | _ | |a Filimonov, S. |b 0 |u FZJ |0 P:(DE-Juel1)VDB26536 |
| 245 | _ | _ | |a 'Rotating' steps in Si(0 0 1) homoepitaxy |
| 260 | _ | _ | |a Amsterdam |b Elsevier |c 2004 |
| 300 | _ | _ | |a 31 - 36 |
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| 440 | _ | 0 | |a Surface Science |x 0039-6028 |0 5673 |v 549 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Steps on Si(001) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to "rotate" toward [110] directions during Si growth. This step "rotation" occurs due to a faceting of the step edges. A theoretical analysis of adatom incorporation into the steps shows that this kinetic instability may be caused by a suppressed mobility of the growing species along the SA step edge. (C) 2003 Elsevier B.V. All rights reserved. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
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| 653 | 2 | 0 | |2 Author |a computer simulations |
| 653 | 2 | 0 | |2 Author |a models of surface kinetics |
| 653 | 2 | 0 | |2 Author |a molecular beam epitaxy |
| 653 | 2 | 0 | |2 Author |a scanning tunneling microscopy |
| 653 | 2 | 0 | |2 Author |a faceting |
| 700 | 1 | _ | |a Voigtländer, B. |b 1 |u FZJ |0 P:(DE-Juel1)VDB5601 |
| 773 | _ | _ | |a 10.1016/j.susc.2003.11.033 |g Vol. 549, p. 31 - 36 |p 31 - 36 |q 549<31 - 36 |0 PERI:(DE-600)1479030-0 |t Surface science |v 549 |y 2004 |x 0039-6028 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.susc.2003.11.033 |
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