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024 7 _ |2 DOI
|a 10.1016/j.susc.2003.11.033
024 7 _ |2 WOS
|a WOS:000187894100004
037 _ _ |a PreJuSER-32230
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Chemistry, Physical
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Filimonov, S.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB26536
245 _ _ |a 'Rotating' steps in Si(0 0 1) homoepitaxy
260 _ _ |a Amsterdam
|b Elsevier
|c 2004
300 _ _ |a 31 - 36
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Surface Science
|x 0039-6028
|0 5673
|v 549
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Steps on Si(001) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to "rotate" toward [110] directions during Si growth. This step "rotation" occurs due to a faceting of the step edges. A theoretical analysis of adatom incorporation into the steps shows that this kinetic instability may be caused by a suppressed mobility of the growing species along the SA step edge. (C) 2003 Elsevier B.V. All rights reserved.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a computer simulations
653 2 0 |2 Author
|a models of surface kinetics
653 2 0 |2 Author
|a molecular beam epitaxy
653 2 0 |2 Author
|a scanning tunneling microscopy
653 2 0 |2 Author
|a faceting
700 1 _ |a Voigtländer, B.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB5601
773 _ _ |a 10.1016/j.susc.2003.11.033
|g Vol. 549, p. 31 - 36
|p 31 - 36
|q 549<31 - 36
|0 PERI:(DE-600)1479030-0
|t Surface science
|v 549
|y 2004
|x 0039-6028
856 7 _ |u http://dx.doi.org/10.1016/j.susc.2003.11.033
909 C O |o oai:juser.fz-juelich.de:32230
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913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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914 1 _ |y 2004
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
|x 0
970 _ _ |a VDB:(DE-Juel1)34067
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980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-3-20110106


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