TY - JOUR
AU - Ostapchuk, T.
AU - Petzelt, J.
AU - Zelezny, V.
AU - Pashkin, A.
AU - Pokorny, J.
AU - Drbohlav, I.
AU - Kuzel, R.
AU - Rafaja, D.
AU - Gorshunov, B. P.
AU - Dressel, M.
AU - Ohly, Ch.
AU - Hoffmann-Eifert, S.
AU - Waser, R.
TI - Origin of soft-mode stiffening and reduced dielectric response in SrTiO3 thin films
JO - Physical review / B
VL - 66
IS - 23
SN - 0163-1829
CY - College Park, Md.
PB - APS
M1 - PreJuSER-32287
SP - 235406
PY - 2002
N1 - Record converted from VDB: 12.11.2012
AB - The problem of the reduced dielectric response in thin films of high-permittivity materials is analyzed by studying the soft-mode response in several SrTiO3 thin films by means of Fourier transform far infrared, monochromatic submillimeter, and micro-Raman spectroscopies. A 300-nm-thick metalorganic chemical vapor deposition film, quasiepitaxially grown on a (0001) sapphire substrate with a perfect <111> orientation, displays a ferroelectric transition near 125 K induced by a tensile residual stress, appearing apparently simultaneously with the antiferrodistortive transition. On the other hand, polycrystalline chemical solution deposition films grown on (0001) sapphire, and also tensile stressed, show a harder soft mode response without the appearance of macroscopic ferroelectricity. This effect, which increases with the film thickness, is explained by a strong depolarizing field induced by the percolated porosity and cracks (in the 10-nm scale) along the boundaries of columnar grains (normal to the probe field direction). Brick-wall model calculations showed that 0.2 vol. % of such a porosity type reduces the permittivity from 30000 to less than 1000. The activation of the forbidden IR modes in the Raman spectra in the whole 80-300-K temperature range studied is explained by the effect of polar grain boundaries, in analogy with the bulk ceramics.
KW - J (WoSType)
LB - PUB:(DE-HGF)16
UR - <Go to ISI:>//WOS:000180279400097
DO - DOI:10.1103/PhysRevB.66.235406
UR - https://juser.fz-juelich.de/record/32287
ER -