Journal Article PreJuSER-32287

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Origin of soft-mode stiffening and reduced dielectric response in SrTiO3 thin films

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2002
APS College Park, Md.

Physical review / B 66(23), 235406 () [10.1103/PhysRevB.66.235406]

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Abstract: The problem of the reduced dielectric response in thin films of high-permittivity materials is analyzed by studying the soft-mode response in several SrTiO3 thin films by means of Fourier transform far infrared, monochromatic submillimeter, and micro-Raman spectroscopies. A 300-nm-thick metalorganic chemical vapor deposition film, quasiepitaxially grown on a (0001) sapphire substrate with a perfect <111> orientation, displays a ferroelectric transition near 125 K induced by a tensile residual stress, appearing apparently simultaneously with the antiferrodistortive transition. On the other hand, polycrystalline chemical solution deposition films grown on (0001) sapphire, and also tensile stressed, show a harder soft mode response without the appearance of macroscopic ferroelectricity. This effect, which increases with the film thickness, is explained by a strong depolarizing field induced by the percolated porosity and cracks (in the 10-nm scale) along the boundaries of columnar grains (normal to the probe field direction). Brick-wall model calculations showed that 0.2 vol. % of such a porosity type reduces the permittivity from 30000 to less than 1000. The activation of the forbidden IR modes in the Raman spectra in the whole 80-300-K temperature range studied is explained by the effect of polar grain boundaries, in analogy with the bulk ceramics.

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Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Elektrokeramische Materialien (IFF-EKM)
Research Program(s):
  1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002
Notes: Nachtrag
Notes: This version is available at the following Publisher URL: http://prb.aps.org
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 Record created 2012-11-13, last modified 2023-04-26


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