TY  - JOUR
AU  - Jeliazova, Y.
AU  - Franchy, R.
TI  - Growth of ultra thin Ga and Ga2O3 films on Ni(100)
JO  - Surface science
VL  - 527
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - PreJuSER-3305
SP  - 57
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - The growth of ultra-thin films of Ga2O3 on Ni(1 0 0) was investigated in the temperature range of 300-800 K by using Auger electron spectroscopy, low energy electron diffraction (LEED) and scanning tunneling microscopy. In addition, the growth of Ga at 300 K was also studied. For the formation of Ga2O3, first at 300 K, a 15 Angstrom thick Ga layer was deposited on the Ni(1 0 0) surface. Oxygen adsorption until saturation leads to the formation of a thin amorphous Ga oxide on the top of a metallic Ga interlayer. Annealing up to 700 K leads to the formation of a well-ordered thin film of gamma'-Ga2O3 which is accompanied by a coalescence and ordering of the Ga2O3 islands. Large terraces are found which are separated by step heights of 2 Angstrom. The LEED pattern shows a 12-fold ring structure, which originates from two domains with hexagonal structure, which are rotated by 90degrees with respect to each other. The lattice constant of the hexagonal unit cells is determined to be 2.8 Angstrom. (C) 2003 Elsevier Science B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000181571000017
DO  - DOI:10.1016/S0039-6028(02)02681-X
UR  - https://juser.fz-juelich.de/record/3305
ER  -