guest ::
| Home > Publications database > Growth of ultra thin Ga and Ga2O3 films on Ni(100) |
| Home > Publications database > Growth of ultra thin Ga and Ga2O3 films on Ni(100) |
| Journal Article | PreJuSER-3305 |
;
2003
Elsevier
Amsterdam
This record in other databases: 
Please use a persistent id in citations: doi:10.1016/S0039-6028(02)02681-X
Abstract: The growth of ultra-thin films of Ga2O3 on Ni(1 0 0) was investigated in the temperature range of 300-800 K by using Auger electron spectroscopy, low energy electron diffraction (LEED) and scanning tunneling microscopy. In addition, the growth of Ga at 300 K was also studied. For the formation of Ga2O3, first at 300 K, a 15 Angstrom thick Ga layer was deposited on the Ni(1 0 0) surface. Oxygen adsorption until saturation leads to the formation of a thin amorphous Ga oxide on the top of a metallic Ga interlayer. Annealing up to 700 K leads to the formation of a well-ordered thin film of gamma'-Ga2O3 which is accompanied by a coalescence and ordering of the Ga2O3 islands. Large terraces are found which are separated by step heights of 2 Angstrom. The LEED pattern shows a 12-fold ring structure, which originates from two domains with hexagonal structure, which are rotated by 90degrees with respect to each other. The lattice constant of the hexagonal unit cells is determined to be 2.8 Angstrom. (C) 2003 Elsevier Science B.V. All rights reserved.
Keyword(s): J ; gallium (auto) ; nickel (auto) ; auger electron spectroscopy (auto) ; low energy electron diffraction (LEED) (auto) ; scanning tunneling microscopy (auto) ; surface structure, morphology, roughness, and topography (auto)
|
The record appears in these collections: |