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@ARTICLE{Jeliazova:3305,
      author       = {Jeliazova, Y. and Franchy, R.},
      title        = {{G}rowth of ultra thin {G}a and {G}a2{O}3 films on
                      {N}i(100)},
      journal      = {Surface science},
      volume       = {527},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-3305},
      pages        = {57},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The growth of ultra-thin films of Ga2O3 on Ni(1 0 0) was
                      investigated in the temperature range of 300-800 K by using
                      Auger electron spectroscopy, low energy electron diffraction
                      (LEED) and scanning tunneling microscopy. In addition, the
                      growth of Ga at 300 K was also studied. For the formation of
                      Ga2O3, first at 300 K, a 15 Angstrom thick Ga layer was
                      deposited on the Ni(1 0 0) surface. Oxygen adsorption until
                      saturation leads to the formation of a thin amorphous Ga
                      oxide on the top of a metallic Ga interlayer. Annealing up
                      to 700 K leads to the formation of a well-ordered thin film
                      of gamma'-Ga2O3 which is accompanied by a coalescence and
                      ordering of the Ga2O3 islands. Large terraces are found
                      which are separated by step heights of 2 Angstrom. The LEED
                      pattern shows a 12-fold ring structure, which originates
                      from two domains with hexagonal structure, which are rotated
                      by 90degrees with respect to each other. The lattice
                      constant of the hexagonal unit cells is determined to be 2.8
                      Angstrom. (C) 2003 Elsevier Science B.V. All rights
                      reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000181571000017},
      doi          = {10.1016/S0039-6028(02)02681-X},
      url          = {https://juser.fz-juelich.de/record/3305},
}