| Hauptseite > Publikationsdatenbank > Curie temperatures of III-V magnetic semiconductors calculated from first-principles |
| Journal Article | PreJuSER-33616 |
; ;
2003
EDP Sciences
Les Ulis
This record in other databases:
Please use a persistent id in citations: doi:10.1209/epl/i2003-00191-8
Abstract: Curie temperatures of the diluted magnetic semiconductors (Ga, Mn) As, (Ga, Mn) N, (Ga, Cr) As and (Ga, Cr) N are evaluated from first principles. The electronic structure is calculated in the local spin density approximation by using the Korringa-Kohn-Rostoker method combined with the coherent potential approximation to describe the substitutional and spin disorder. From the total energy differences between the ferromagnetic state and the spin-glass state, realistic estimations of Curie temperatures are achieved by using a mapping on the Heisenberg model in the mean-field approximation. Effects of additional carrier doping treatments are also investigated. Very large Curie temperatures are obtained, lying above room temperature for ( Ga, Mn) N, ( Ga, Cr) As and ( Ga, Cr) N. Upon hole doping the Curie temperature of (Ga, Mn) N further increases, while (Ga, Mn) As shows a plateau behavior.
Keyword(s): J
|
The record appears in these collections: |