%0 Journal Article
%A Serin, M. J.
%A Harder, N.
%A Carius, R.
%T Investigation of the transport properties of microcrystalline silicon by time-of-flight (TOF)
%J Journal of materials science / Materials in electronics
%V 14
%@ 0957-4522
%C Dordrecht [u.a.]
%I Springer Science + Business Media B.V
%M PreJuSER-33984
%P 733 - 734
%D 2003
%Z Record converted from VDB: 12.11.2012
%X The transport properties of microcrystalline silicon have been studied by the time-of-flight technique on a 6.3-mum thick n-i-p solar cell illuminated from the p-side (n-side) to obtain electron (hole) current transients. The transients exhibit dispersive behavior. At room temperature, drift-mobility values of about 2-4 cm(2) V-1 s(-1) and 2 cm(2) V-1 s(-1) were deduced for electrons and holes, respectively. The dispersion parameters alpha(l) and alpha(2), as determined from the pre- and post-transit slopes of the current transients were similar to those for a-Si:H. (C) 2003 Kluwer Academic Publishers.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000185962400032
%R 10.1023/A:1026151725719
%U https://juser.fz-juelich.de/record/33984