Journal Article

PreJuSER-33984

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Investigation of the transport properties of microcrystalline silicon by time-of-flight (TOF)

Serin, M. J. ; Harder, N. ; Carius, R.FZJ*

2003
Springer Science + Business Media B.V Dordrecht [u.a.]

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Please use a persistent id in citations: doi:10.1023/A:1026151725719

Abstract: The transport properties of microcrystalline silicon have been studied by the time-of-flight technique on a 6.3-mum thick n-i-p solar cell illuminated from the p-side (n-side) to obtain electron (hole) current transients. The transients exhibit dispersive behavior. At room temperature, drift-mobility values of about 2-4 cm(2) V-1 s(-1) and 2 cm(2) V-1 s(-1) were deduced for electrons and holes, respectively. The dispersion parameters alpha(l) and alpha(2), as determined from the pre- and post-transit slopes of the current transients were similar to those for a-Si:H. (C) 2003 Kluwer Academic Publishers.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)

Research Program(s):

1. Photovoltaik (E02)

Appears in the scientific report 2003
Notes: Nachtrag

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