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000033984 084__ $$2WoS$$aEngineering, Electrical & Electronic
000033984 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000033984 084__ $$2WoS$$aPhysics, Applied
000033984 084__ $$2WoS$$aPhysics, Condensed Matter
000033984 1001_ $$0P:(DE-HGF)0$$aSerin, M. J.$$b0
000033984 245__ $$aInvestigation of the transport properties of microcrystalline silicon by time-of-flight (TOF)
000033984 260__ $$aDordrecht [u.a.]$$bSpringer Science + Business Media B.V$$c2003
000033984 300__ $$a733 - 734
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000033984 440_0 $$010182$$aJournal of Materials Science - Materials in Electronics$$v14$$x0957-4522
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000033984 520__ $$aThe transport properties of microcrystalline silicon have been studied by the time-of-flight technique on a 6.3-mum thick n-i-p solar cell illuminated from the p-side (n-side) to obtain electron (hole) current transients. The transients exhibit dispersive behavior. At room temperature, drift-mobility values of about 2-4 cm(2) V-1 s(-1) and 2 cm(2) V-1 s(-1) were deduced for electrons and holes, respectively. The dispersion parameters alpha(l) and alpha(2), as determined from the pre- and post-transit slopes of the current transients were similar to those for a-Si:H. (C) 2003 Kluwer Academic Publishers.
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000033984 7001_ $$0P:(DE-HGF)0$$aHarder, N.$$b1
000033984 7001_ $$0P:(DE-Juel1)VDB4964$$aCarius, R.$$b2$$uFZJ
000033984 773__ $$0PERI:(DE-600)2016994-2$$a10.1023/A:1026151725719$$gVol. 14, p. 733 - 734$$p733 - 734$$q14<733 - 734$$tJournal of materials science / Materials in electronics$$v14$$x0957-4522$$y2003
000033984 8567_ $$uhttp://dx.doi.org/10.1023/A:1026151725719
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000033984 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000033984 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x0
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