TY  - JOUR
AU  - Serin, M. J.
AU  - Harder, N.
AU  - Carius, R.
TI  - Investigation of the transport properties of microcrystalline silicon by time-of-flight (TOF)
JO  - Journal of materials science / Materials in electronics
VL  - 14
SN  - 0957-4522
CY  - Dordrecht [u.a.]
PB  - Springer Science + Business Media B.V
M1  - PreJuSER-33984
SP  - 733 - 734
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - The transport properties of microcrystalline silicon have been studied by the time-of-flight technique on a 6.3-mum thick n-i-p solar cell illuminated from the p-side (n-side) to obtain electron (hole) current transients. The transients exhibit dispersive behavior. At room temperature, drift-mobility values of about 2-4 cm(2) V-1 s(-1) and 2 cm(2) V-1 s(-1) were deduced for electrons and holes, respectively. The dispersion parameters alpha(l) and alpha(2), as determined from the pre- and post-transit slopes of the current transients were similar to those for a-Si:H. (C) 2003 Kluwer Academic Publishers.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000185962400032
DO  - DOI:10.1023/A:1026151725719
UR  - https://juser.fz-juelich.de/record/33984
ER  -