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@ARTICLE{Serin:33984,
author = {Serin, M. J. and Harder, N. and Carius, R.},
title = {{I}nvestigation of the transport properties of
microcrystalline silicon by time-of-flight ({TOF})},
journal = {Journal of materials science / Materials in electronics},
volume = {14},
issn = {0957-4522},
address = {Dordrecht [u.a.]},
publisher = {Springer Science + Business Media B.V},
reportid = {PreJuSER-33984},
pages = {733 - 734},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {The transport properties of microcrystalline silicon have
been studied by the time-of-flight technique on a 6.3-mum
thick n-i-p solar cell illuminated from the p-side (n-side)
to obtain electron (hole) current transients. The transients
exhibit dispersive behavior. At room temperature,
drift-mobility values of about 2-4 cm(2) V-1 s(-1) and 2
cm(2) V-1 s(-1) were deduced for electrons and holes,
respectively. The dispersion parameters alpha(l) and
alpha(2), as determined from the pre- and post-transit
slopes of the current transients were similar to those for
a-Si:H. (C) 2003 Kluwer Academic Publishers.},
keywords = {J (WoSType)},
cin = {IPV},
ddc = {600},
cid = {I:(DE-Juel1)VDB46},
pnm = {Photovoltaik},
pid = {G:(DE-Juel1)FUEK247},
shelfmark = {Engineering, Electrical $\&$ Electronic / Materials
Science, Multidisciplinary / Physics, Applied / Physics,
Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000185962400032},
doi = {10.1023/A:1026151725719},
url = {https://juser.fz-juelich.de/record/33984},
}