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| 001 | 33984 | ||
| 005 | 20240708133638.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1023/A:1026151725719 |
| 024 | 7 | _ | |2 WOS |a WOS:000185962400032 |
| 037 | _ | _ | |a PreJuSER-33984 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 600 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Serin, M. J. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Investigation of the transport properties of microcrystalline silicon by time-of-flight (TOF) |
| 260 | _ | _ | |a Dordrecht [u.a.] |b Springer Science + Business Media B.V |c 2003 |
| 300 | _ | _ | |a 733 - 734 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Materials Science - Materials in Electronics |x 0957-4522 |0 10182 |v 14 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The transport properties of microcrystalline silicon have been studied by the time-of-flight technique on a 6.3-mum thick n-i-p solar cell illuminated from the p-side (n-side) to obtain electron (hole) current transients. The transients exhibit dispersive behavior. At room temperature, drift-mobility values of about 2-4 cm(2) V-1 s(-1) and 2 cm(2) V-1 s(-1) were deduced for electrons and holes, respectively. The dispersion parameters alpha(l) and alpha(2), as determined from the pre- and post-transit slopes of the current transients were similar to those for a-Si:H. (C) 2003 Kluwer Academic Publishers. |
| 536 | _ | _ | |a Photovoltaik |c E02 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK247 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Harder, N. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Carius, R. |b 2 |u FZJ |0 P:(DE-Juel1)VDB4964 |
| 773 | _ | _ | |a 10.1023/A:1026151725719 |g Vol. 14, p. 733 - 734 |p 733 - 734 |q 14<733 - 734 |0 PERI:(DE-600)2016994-2 |t Journal of materials science / Materials in electronics |v 14 |y 2003 |x 0957-4522 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1023/A:1026151725719 |
| 909 | C | O | |o oai:juser.fz-juelich.de:33984 |p VDB |
| 913 | 1 | _ | |k E02 |v Photovoltaik |l Erneuerbare Energien |b Energie |0 G:(DE-Juel1)FUEK247 |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2003 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IPV |l Institut für Photovoltaik |d 31.12.2006 |g IPV |0 I:(DE-Juel1)VDB46 |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)39273 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)IMD-3-20101013 |
| 981 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
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