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001     35288
005     20180210140530.0
024 7 _ |a 1605-8127
|2 ISSN
037 _ _ |a PreJuSER-35288
082 _ _ |a 530
100 1 _ |a Voigtländer, B.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB5601
245 _ _ |a Scanning tunneling microscopy study of Si and Ge on Silicon
260 _ _ |a St. Petersburg
|b Advanced Study Center
|c 2003
300 _ _ |a 10 - 14
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Reviews on Advanced Materials Science
|x 1605-8127
|0 9916
|v 4
500 _ _ |a Record converted from VDB: 12.11.2012
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
773 _ _ |g Vol. 4, p. 10 - 14
|p 10 - 14
|q 4<10 - 14
|0 PERI:(DE-600)2033066-2
|t Reviews on advanced materials science
|v 4
|y 2003
|x 1605-8127
909 C O |o oai:juser.fz-juelich.de:35288
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |a Nachtrag
|y 2003
915 _ _ |0 StatID:(DE-HGF)0020
|a No peer review
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
|x 0
970 _ _ |a VDB:(DE-Juel1)42226
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-3-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-3-20110106

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