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@ARTICLE{Schelling:35289,
author = {Schelling, C. and Myslivecek, J. and Mühlberger, M. and
Lichtenberger, H. and Zhong, Z. and Voigtländer, B. and
Bauer, G. and Schäffler, F.},
title = {{K}inetic and strain-driven growth phenomena on {S}i(001)},
journal = {Physica status solidi / A},
volume = {201},
issn = {0031-8965},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {PreJuSER-35289},
pages = {324 - 328},
year = {2004},
note = {Record converted from VDB: 12.11.2012},
abstract = {Self-organization phenomena in semiconductors are usually
based on strain-driven island growth during hetero epitaxial
layer deposition. However, kinetic phenomena can become
important and even dominating at the low growth temperatures
usually employed during molecular beam epitaxy. We report on
kinetic step bunching on Si(001), and identify the driving
mechanism on the atomic scale via kinetic Monte Carlo
simulations. Another phenomena discussed is facet formation
during annealing of SiO2-covered Si(001) nanostructures at
the relatively low temperatures usually employed for oxide
desorption. Both phenomena are combined to facilitate
perfect ordering of self-assembled Ge dots on facetted
Si(001) nanostructure templates. (C) 2004 WILEY-VCH Verlag
GmbH $\&$ Co. KGaA, Weinheim.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {530},
cid = {I:(DE-Juel1)VDB43},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Materials Science, Multidisciplinary / Physics, Applied /
Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000188794900025},
doi = {10.1002/pssa.200303966},
url = {https://juser.fz-juelich.de/record/35289},
}