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000035291 0247_ $$2DOI$$a10.1103/PhysRevB.69.125331
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000035291 084__ $$2WoS$$aPhysics, Condensed Matter
000035291 1001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b0$$uFZJ
000035291 245__ $$aInfluence of material, surface reconstruction and strain of diffusion at a Ge(111) surface
000035291 260__ $$aCollege Park, Md.$$bAPS$$c2004
000035291 300__ $$a125331
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000035291 440_0 $$04919$$aPhysical Review B$$v69$$x1098-0121
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000035291 520__ $$aThe measurement of the two-dimensional island density after submonolayer deposition is used to determine the effect of material, surface reconstruction, and strain on surface diffusion. Specifically prepared strained and relaxed Ge surfaces are used as templates. Scanning tunneling microscopy is used to determine the density of two-dimensional islands. The change of the material (from Si to Ge) increases the diffusion length substantially. The diffusion length is increased by a factor of 10 when the substrate material is changed from Si to Ge. The effect is weaker when the deposited material is changed. The diffusion barrier for Ge and Si adatoms is found to increase with increasing compressive strain of the Ge(111) substrate. Unexpectedly, the change of the surface reconstruction from (7 X 7) to (5 X 5) has negligible influence on the diffusion length.
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000035291 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b1$$uFZJ
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000035291 773__ $$0PERI:(DE-600)2844160-6$$a10.1103/PhysRevB.69.125331$$gVol. 69, p. 125331$$n12$$p125331$$q69<125331$$tPhysical review / B$$v69$$x1098-0121$$y2004
000035291 8567_ $$uhttp://hdl.handle.net/2128/2156$$uhttp://dx.doi.org/10.1103/PhysRevB.69.125331
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