Journal Article

PreJuSER-35291

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Influence of material, surface reconstruction and strain of diffusion at a Ge(111) surface

Cherepanov, V.FZJ* ; Voigtländer, B.FZJ*

2004
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/2156  doi:10.1103/PhysRevB.69.125331

Abstract: The measurement of the two-dimensional island density after submonolayer deposition is used to determine the effect of material, surface reconstruction, and strain on surface diffusion. Specifically prepared strained and relaxed Ge surfaces are used as templates. Scanning tunneling microscopy is used to determine the density of two-dimensional islands. The change of the material (from Si to Ge) increases the diffusion length substantially. The diffusion length is increased by a factor of 10 when the substrate material is changed from Si to Ge. The effect is weaker when the deposited material is changed. The diffusion barrier for Ge and Si adatoms is found to increase with increasing compressive strain of the Ge(111) substrate. Unexpectedly, the change of the surface reconstruction from (7 X 7) to (5 X 5) has negligible influence on the diffusion length.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004
Notes: This version is available at the following Publisher URL: http://prb.aps.org

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