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@ARTICLE{Cherepanov:35291,
      author       = {Cherepanov, V. and Voigtländer, B.},
      title        = {{I}nfluence of material, surface reconstruction and strain
                      of diffusion at a {G}e(111) surface},
      journal      = {Physical review / B},
      volume       = {69},
      number       = {12},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-35291},
      pages        = {125331},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The measurement of the two-dimensional island density after
                      submonolayer deposition is used to determine the effect of
                      material, surface reconstruction, and strain on surface
                      diffusion. Specifically prepared strained and relaxed Ge
                      surfaces are used as templates. Scanning tunneling
                      microscopy is used to determine the density of
                      two-dimensional islands. The change of the material (from Si
                      to Ge) increases the diffusion length substantially. The
                      diffusion length is increased by a factor of 10 when the
                      substrate material is changed from Si to Ge. The effect is
                      weaker when the deposited material is changed. The diffusion
                      barrier for Ge and Si adatoms is found to increase with
                      increasing compressive strain of the Ge(111) substrate.
                      Unexpectedly, the change of the surface reconstruction from
                      (7 X 7) to (5 X 5) has negligible influence on the diffusion
                      length.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000221259000094},
      doi          = {10.1103/PhysRevB.69.125331},
      url          = {https://juser.fz-juelich.de/record/35291},
}