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| Dissertation / PhD Thesis/Book | PreJuSER-36009 |
1999
Forschungszentrum, Zentralbibliothek
Jülich
Please use a persistent id in citations: http://hdl.handle.net/2128/20534
Report No.: Juel-3705
Abstract: In this thesis the system of a laterally confined resonant tunneling diode in the single-electron transport regime is considered . Here the double barrier system is embedded in a semiconductor heterostructure . The following investigations focus mainly on the electronic transport and electronic structure inside such a quantum dot system, which is coupled to the two electron reservoirs via tunnel barriers . Experimental as well as theoretical results are presented . In particular the influence of an extern" al magnetic field an this system is discussed . The theoretical part gives a description of the magneto-transport by use of a quantum dot model system based on realtime Green's functions . Furthermore the consideration of a projected density matrix provides insight into the electronic structure of the quantum dot . As a result a capacitive quantum dot regime is defined employing the results of the numerical simulations . In the experimental part of the thesis a vertical field effect transistor with a lateral Schottky-Gate (MESFET) and an embedded double barrier structure is presented. Magneto-transport measurements in the sub-Kelvin regime are performed on such a quantum dot system with variable lateral quantization energy controlled by the applied gate voltage . The analysis of the observed typical step-current-voltage characteristics yields information about the electronic structure of the system for the given boundary conditions. A direct comparision of the simulated characteristics of the structure with the measurements shows a very good agreement within the error boundaries for a suitable choice of open structure parameters in the theoretical quantum dot model .
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