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@ARTICLE{Lohse:36050,
author = {Lohse, O. and Grossmann, M. and Bolten, D. and Böttger, U.
and Waser, R.},
title = {{R}elaxation mechanisms in ferroelectric thin film
capacitors for {F}e{RAM} application},
journal = {Integrated ferroelectrics},
volume = {33},
issn = {1058-4587},
address = {London [u.a.]},
publisher = {Taylor $\&$ Francis},
reportid = {PreJuSER-36050},
pages = {39 - 48},
year = {2001},
note = {Record converted from VDB: 12.11.2012},
abstract = {In this work decided measuring techniques and procedures
based on conventional hysteresis measurements and fast pulse
characterization are exploited to emphasize the meaning of
the ferroelectric relaxation for the fast read and write
access of the: memory cell in the time region of several
nanoseconds. The dependence of the transient polarization
reversal on the measuring frequency, and the voltage pulse
pattern is presented for PZT thin film material. In the
light of the extracted data the theoretical models of
classical ferroelectric phase transition compared to
dissipative charge redistribution is discussed.},
keywords = {J (WoSType)},
cin = {IFF-EKM},
ddc = {620},
cid = {I:(DE-Juel1)VDB35},
pnm = {Festkörperforschung für die Informationstechnik},
pid = {G:(DE-Juel1)FUEK54},
shelfmark = {Engineering, Electrical $\&$ Electronic / Physics, Applied
/ Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000167524500006},
doi = {10.1080/10584580108222286},
url = {https://juser.fz-juelich.de/record/36050},
}