Journal Article

PreJuSER-36050

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Relaxation mechanisms in ferroelectric thin film capacitors for FeRAM application

Lohse, O. ; Grossmann, M. ; Bolten, D. ; Böttger, U. ; Waser, R.FZJ*

2001
Taylor & Francis London [u.a.]

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Please use a persistent id in citations: doi:10.1080/10584580108222286

Abstract: In this work decided measuring techniques and procedures based on conventional hysteresis measurements and fast pulse characterization are exploited to emphasize the meaning of the ferroelectric relaxation for the fast read and write access of the: memory cell in the time region of several nanoseconds. The dependence of the transient polarization reversal on the measuring frequency, and the voltage pulse pattern is presented for PZT thin film material. In the light of the extracted data the theoretical models of classical ferroelectric phase transition compared to dissipative charge redistribution is discussed.

Keyword(s): J ; frequency dependence of P-V (auto) ; ferroelectric relaxation (auto) ; Curie-von Schweidler (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektrokeramische Materialien (IFF-EKM)

Research Program(s):

1. Festkörperforschung für die Informationstechnik (23.42.0)

Appears in the scientific report 2001

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