TY  - JOUR
AU  - Costina, I.
AU  - Franchy, R.
TI  - The band-gap of amorphous and well-ordered Al2O3 on Ni3Al(100)
JO  - Applied physics letters
VL  - 78
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-39770
SP  - 4139
PY  - 2001
N1  - Record converted from VDB: 12.11.2012
AB  - The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepared by adsorption of O-2 at room temperature, while the well-ordered Al2O3 are obtained by direct oxidation of Ni3Al at 1150 K. The band gap energy is similar to3.2 and similar to4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al2O3 is associated with defect-induced states located in the band gap. (C) 2001 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000169340000026
DO  - DOI:10.1063/1.1380403
UR  - https://juser.fz-juelich.de/record/39770
ER  -