TY  - JOUR
AU  - Soni, R.
AU  - Meuffels, P.
AU  - Kohlstedt, H.
AU  - Kügeler, C.
AU  - Waser, R.
TI  - Reliability analysis of the low resistance state stability of Ge_0.3Se_0.7 based solid electrolyte nonvolatile memory cells
JO  - Applied physics letters
VL  - 94
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-3986
SP  - 123503
PY  - 2009
N1  - Record converted from VDB: 12.11.2012
AB  - We report on the low resistance state (LRS) stability analysis of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells under elevated temperature and bias current stress conditions. The activation energy was found to be about 1.02 eV, which is comparable to that of an electromigration-induced failure process. Experimental results also show that there is trade-off between the LRS stability and the thickness of Ge0.3Se0.7 layer.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000264633500074
DO  - DOI:10.1063/1.3103555
UR  - https://juser.fz-juelich.de/record/3986
ER  -