Reliability analysis of the low resistance state stability of Ge_0.3Se_0.7 based solid electrolyte nonvolatile memory cells

Soni, R.; Kohlstedt, H.; Kügeler, C.; Meuffels, P.; Waser, R.

doi:10.1063/1.3103555

Journal Article

Reliability analysis of the low resistance state stability of Ge_0.3Se_0.7 based solid electrolyte nonvolatile memory cells

Soni, R.FZJ* ; Meuffels, P.FZJ* ; Kohlstedt, H.FZJ* ; Kügeler, C.FZJ* ; Waser, R.FZJ*

2009
American Institute of Physics Melville, NY

Applied physics letters 94, 123503 (2009) [10.1063/1.3103555]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17249 doi:10.1063/1.3103555

Abstract: We report on the low resistance state (LRS) stability analysis of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells under elevated temperature and bias current stress conditions. The activation energy was found to be about 1.02 eV, which is comparable to that of an electromigration-induced failure process. Experimental results also show that there is trade-off between the LRS stability and the thickness of Ge0.3Se0.7 layer.

Keyword(s): J ; circuit reliability (auto) ; electromigration (auto) ; germanium compounds (auto) ; random-access storage (auto) ; solid electrolytes (auto)