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000039991 084__ $$2WoS$$aPhysics, Applied
000039991 1001_ $$0P:(DE-Juel1)VDB5491$$aHeinsohn, J.-K.$$b0$$uFZJ
000039991 245__ $$aCurrent transport in ramp-type junctions with engineered interface
000039991 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2001
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000039991 440_0 $$03051$$aJournal of Applied Physics$$v89$$x0021-8979
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000039991 520__ $$aThe transport properties of "interface-engineered" edge-type YBa2Cu3O7 Josephson junctions are investigated in detail. We have investigated the dependence of the current-voltage characteristics on external magnetic field, temperature, and microwave irradiation and compare them to the resistively shunted junction model. The temperature dependence of the critical current and the normal resistance allows us to draw conclusions to the transport of quasiparticles and Cooper pairs in the investigated "interface-engineered" junctions. We have studied the properties of junctions for which La doped YBa2Cu3O7 is used for the superconducting electrodes. We will propose a model for the undoped and the La doped case which takes into account a barrier which consists of a series connection of a normal conducting layer and an insulator, containing superconducting microconstrictions. (C) 2001 American Institute of Physics.
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000039991 7001_ $$0P:(DE-Juel1)VDB5464$$aDittmann, R.$$b1$$uFZJ
000039991 7001_ $$0P:(DE-Juel1)VDB5562$$aRodriguez Contreras, J.$$b2$$uFZJ
000039991 7001_ $$0P:(DE-Juel1)VDB5724$$aScherbel, J.$$b3$$uFZJ
000039991 7001_ $$0P:(DE-Juel1)VDB5527$$aKlushin, A. M.$$b4$$uFZJ
000039991 7001_ $$0P:(DE-Juel1)VDB3105$$aSiegel, M.$$b5$$uFZJ
000039991 7001_ $$0P:(DE-Juel1)VDB5020$$aJia, C. L.$$b6$$uFZJ
000039991 7001_ $$0P:(DE-HGF)0$$aGolubov, A.$$b7
000039991 7001_ $$0P:(DE-HGF)0$$aKupriyanov, M. Y.$$b8
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