Journal Article

PreJuSER-39991

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Current transport in ramp-type junctions with engineered interface

Heinsohn, J.-K.FZJ* ; Dittmann, R.FZJ* ; Rodriguez Contreras, J.FZJ* ; Scherbel, J.FZJ* ; Klushin, A. M.FZJ* ; Siegel, M.FZJ* ; Jia, C. L.FZJ* ; Golubov, A. ; Kupriyanov, M. Y.

2001
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1251  doi:10.1063/1.1351056

Abstract: The transport properties of "interface-engineered" edge-type YBa2Cu3O7 Josephson junctions are investigated in detail. We have investigated the dependence of the current-voltage characteristics on external magnetic field, temperature, and microwave irradiation and compare them to the resistively shunted junction model. The temperature dependence of the critical current and the normal resistance allows us to draw conclusions to the transport of quasiparticles and Cooper pairs in the investigated "interface-engineered" junctions. We have studied the properties of junctions for which La doped YBa2Cu3O7 is used for the superconducting electrodes. We will propose a model for the undoped and the La doped case which takes into account a barrier which consists of a series connection of a normal conducting layer and an insulator, containing superconducting microconstrictions. (C) 2001 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Bio- und Chemosensoren (ISG-2)
2. Elektrokeramische Materialien (IFF-EKM)
3. Mikrostrukturforschung (IFF-IMF)

Research Program(s):

1. Schichtsysteme und Bauelemente der Supraleiterelektronik (29.85.0)

Appears in the scientific report 2001
Notes: This version is available at the following Publisher URL: http://jap.aip.org

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