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@ARTICLE{Heinsohn:39991,
      author       = {Heinsohn, J.-K. and Dittmann, R. and Rodriguez Contreras,
                      J. and Scherbel, J. and Klushin, A. M. and Siegel, M. and
                      Jia, C. L. and Golubov, A. and Kupriyanov, M. Y.},
      title        = {{C}urrent transport in ramp-type junctions with engineered
                      interface},
      journal      = {Journal of applied physics},
      volume       = {89},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-39991},
      pages        = {3852},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The transport properties of "interface-engineered"
                      edge-type YBa2Cu3O7 Josephson junctions are investigated in
                      detail. We have investigated the dependence of the
                      current-voltage characteristics on external magnetic field,
                      temperature, and microwave irradiation and compare them to
                      the resistively shunted junction model. The temperature
                      dependence of the critical current and the normal resistance
                      allows us to draw conclusions to the transport of
                      quasiparticles and Cooper pairs in the investigated
                      "interface-engineered" junctions. We have studied the
                      properties of junctions for which La doped YBa2Cu3O7 is used
                      for the superconducting electrodes. We will propose a model
                      for the undoped and the La doped case which takes into
                      account a barrier which consists of a series connection of a
                      normal conducting layer and an insulator, containing
                      superconducting microconstrictions. (C) 2001 American
                      Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {ISG-2 / IFF-EKM / IFF-IMF},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB42 / I:(DE-Juel1)VDB35 / I:(DE-Juel1)VDB37},
      pnm          = {Schichtsysteme und Bauelemente der Supraleiterelektronik},
      pid          = {G:(DE-Juel1)FUEK65},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000167610900050},
      doi          = {10.1063/1.1351056},
      url          = {https://juser.fz-juelich.de/record/39991},
}