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017 _ _ |a This version is available at the following Publisher URL: http://jap.aip.org
024 7 _ |a 10.1063/1.1351056
|2 DOI
024 7 _ |a WOS:000167610900050
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024 7 _ |a 2128/1251
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037 _ _ |a PreJuSER-39991
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Heinsohn, J.-K.
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245 _ _ |a Current transport in ramp-type junctions with engineered interface
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2001
300 _ _ |a 3852
336 7 _ |a Journal Article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
|0 3051
|v 89
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The transport properties of "interface-engineered" edge-type YBa2Cu3O7 Josephson junctions are investigated in detail. We have investigated the dependence of the current-voltage characteristics on external magnetic field, temperature, and microwave irradiation and compare them to the resistively shunted junction model. The temperature dependence of the critical current and the normal resistance allows us to draw conclusions to the transport of quasiparticles and Cooper pairs in the investigated "interface-engineered" junctions. We have studied the properties of junctions for which La doped YBa2Cu3O7 is used for the superconducting electrodes. We will propose a model for the undoped and the La doped case which takes into account a barrier which consists of a series connection of a normal conducting layer and an insulator, containing superconducting microconstrictions. (C) 2001 American Institute of Physics.
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700 1 _ |a Dittmann, R.
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700 1 _ |a Rodriguez Contreras, J.
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700 1 _ |a Scherbel, J.
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700 1 _ |a Klushin, A. M.
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700 1 _ |a Siegel, M.
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700 1 _ |a Jia, C. L.
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700 1 _ |a Golubov, A.
|0 P:(DE-HGF)0
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700 1 _ |a Kupriyanov, M. Y.
|0 P:(DE-HGF)0
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773 _ _ |a 10.1063/1.1351056
|g Vol. 89, p. 3852
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