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| Hauptseite > Publikationsdatenbank > Strain relaxation of pseudomorphic Si(1-X)GeX/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication > print |
| Hauptseite > Publikationsdatenbank > Strain relaxation of pseudomorphic Si(1-X)GeX/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication > print |
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| 245 | _ | _ | |a Strain relaxation of pseudomorphic Si(1-X)GeX/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 2001 |
| 300 | _ | _ | |a 357 - 367 |
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