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Strain relaxation of pseudomorphic Si(1-X)GeX/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

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2001
Elsevier Amsterdam [u.a.]

Nuclear instruments & methods in physics research / B 175/177, 357 - 367 ()

Classification:

Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
  2. Theorie III (IFF-TH-III)
  3. Mikrostrukturforschung (IFF-IMF)
  4. Elektrokeramische Materialien (IFF-EKM)
  5. Institut für Medizin (IME)
Research Program(s):
  1. Ionentechnik (29.87.0)
  2. Festkörperforschung für die Informationstechnik (23.42.0)

Appears in the scientific report 2001
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The record appears in these collections:
Document types > Articles > Journal Article
Institute Collections > ER-C > ER-C-1
Institute Collections > PGI > PGI-5
Institute Collections > PGI > PGI-2
Institute Collections > PGI > PGI-7
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database
INB-3
 Record created 2012-11-13, last modified 2024-06-10
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