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000040408 0247_ $$2DOI$$a10.1016/j.susc.2004.12.028
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000040408 084__ $$2WoS$$aChemistry, Physical
000040408 084__ $$2WoS$$aPhysics, Condensed Matter
000040408 1001_ $$0P:(DE-Juel1)VDB14465$$aRose, V.$$b0$$uFZJ
000040408 245__ $$aHigh temperature oxidation of CoAl(100)
000040408 260__ $$aAmsterdam$$bElsevier$$c2005
000040408 300__ $$a139 - 150
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000040408 440_0 $$05673$$aSurface Science$$v577$$x0039-6028
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000040408 520__ $$aWe have employed Auger electron spectroscopy (AES), high resolution electron energy loss spectroscopy (EELS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) to investigate the growth of an Al2O3 film on CoAl(1 0 0). While exposure to oxygen at room temperature leads to the formation of amorphous alumina, subsequent annealing at higher temperatures results in the growth of well-ordered theta-Al2O3. Well-ordered Al2O3 films are also formed by oxidation at temperatures of 800 K and above. The oxide is characterized by Fuchs-Kliewer modes at around 430, 630, 780 and 920 cm(-1). Oxide islands grow in two sets of domains perpendicular to each other. Under ultra-high vacuum conditions, self-limiting thickness of the oxide layer (9-10 Angstrom) has been found. The band gap of the theta-Al2O3 film on CoAl(1 0 0) is 4.3-4.5 eV. (C) 2005 Elsevier B.V. All rights reserved.
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000040408 65320 $$2Author$$aAES
000040408 65320 $$2Author$$aLEED
000040408 65320 $$2Author$$aEELS
000040408 65320 $$2Author$$aSTM
000040408 65320 $$2Author$$aoxidation
000040408 65320 $$2Author$$acobalt
000040408 65320 $$2Author$$aaluminum
000040408 65320 $$2Author$$aalumina
000040408 7001_ $$0P:(DE-Juel1)VDB5414$$aIbach, H.$$b1$$uFZJ
000040408 7001_ $$0P:(DE-Juel1)VDB41356$$aPodgursky, V.$$b2$$uFZJ
000040408 7001_ $$0P:(DE-HGF)0$$aCostina, I.$$b3
000040408 7001_ $$0P:(DE-Juel1)VDB5400$$aFranchy, R.$$b4$$uFZJ
000040408 773__ $$0PERI:(DE-600)1479030-0$$a10.1016/j.susc.2004.12.028$$gVol. 577, p. 139 - 150$$p139 - 150$$q577<139 - 150$$tSurface science$$v577$$x0039-6028$$y2005
000040408 8567_ $$uhttp://dx.doi.org/10.1016/j.susc.2004.12.028
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000040408 9141_ $$y2005
000040408 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000040408 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
000040408 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
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