%0 Journal Article
%A Wang, S.
%A Coffa, S.
%A Carius, R.
%A Buchal, C.
%T Efficient electroluminescence from rare earth doped MOS diodes
%J Materials science and engineering / B
%V 81
%@ 0921-5107
%C New York, NY [u.a.]
%I Elsevier
%M PreJuSER-40432
%P 102 - 104
%D 2001
%Z Record converted from VDB: 12.11.2012
%X Efficient infra-red and visible electroluminescence (EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV cm(-1). The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated at 10 and 3%, respectively. The high quantum efficiency is due to the high impact excitation cross-section > 10(-15) cm(-2). These observations on MOS structures are an experimental pl oof for efficient light generation by hot electron impact. (C) 2001 Elsevier Science B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000168392800026
%R 10.1016/S0921-5107(00)00668-1
%U https://juser.fz-juelich.de/record/40432