Journal Article

PreJuSER-40432

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Efficient electroluminescence from rare earth doped MOS diodes

Wang, S.FZJ* ; Coffa, S. ; Carius, R.FZJ* ; Buchal, C.FZJ*

2001
Elsevier New York, NY [u.a.]

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Please use a persistent id in citations: doi:10.1016/S0921-5107(00)00668-1

Abstract: Efficient infra-red and visible electroluminescence (EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV cm(-1). The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated at 10 and 3%, respectively. The high quantum efficiency is due to the high impact excitation cross-section > 10(-15) cm(-2). These observations on MOS structures are an experimental pl oof for efficient light generation by hot electron impact. (C) 2001 Elsevier Science B.V. All rights reserved.

Keyword(s): J ; rare earths (auto) ; luminescence (auto) ; Si (auto) ; SiO2 (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Institut für Photovoltaik (IPV)

Research Program(s):

1. Ionentechnik (29.87.0)
2. Grundlagen und Technologie von Dünnschichtsolarzellen (30.90.0)

Appears in the scientific report 2001

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