000040432 001__ 40432
000040432 005__ 20240708133741.0
000040432 0247_ $$2DOI$$a10.1016/S0921-5107(00)00668-1
000040432 0247_ $$2WOS$$aWOS:000168392800026
000040432 037__ $$aPreJuSER-40432
000040432 041__ $$aeng
000040432 082__ $$a600
000040432 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000040432 084__ $$2WoS$$aPhysics, Condensed Matter
000040432 1001_ $$0P:(DE-Juel1)VDB5833$$aWang, S.$$b0$$uFZJ
000040432 245__ $$aEfficient electroluminescence from rare earth doped MOS diodes
000040432 260__ $$aNew York, NY [u.a.]$$bElsevier$$c2001
000040432 300__ $$a102 - 104
000040432 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000040432 3367_ $$2DataCite$$aOutput Types/Journal article
000040432 3367_ $$00$$2EndNote$$aJournal Article
000040432 3367_ $$2BibTeX$$aARTICLE
000040432 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000040432 3367_ $$2DRIVER$$aarticle
000040432 440_0 $$04204$$aMaterials Science and Engineering B$$v81$$x0921-5107
000040432 500__ $$aRecord converted from VDB: 12.11.2012
000040432 520__ $$aEfficient infra-red and visible electroluminescence (EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV cm(-1). The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated at 10 and 3%, respectively. The high quantum efficiency is due to the high impact excitation cross-section > 10(-15) cm(-2). These observations on MOS structures are an experimental pl oof for efficient light generation by hot electron impact. (C) 2001 Elsevier Science B.V. All rights reserved.
000040432 536__ $$0G:(DE-Juel1)FUEK67$$2G:(DE-HGF)$$aIonentechnik$$c29.87.0$$x0
000040432 536__ $$0G:(DE-Juel1)FUEK70$$aGrundlagen und Technologie von Dünnschichtsolarzellen$$c30.90.0$$x1
000040432 588__ $$aDataset connected to Web of Science
000040432 650_7 $$2WoSType$$aJ
000040432 65320 $$2Author$$arare earths
000040432 65320 $$2Author$$aluminescence
000040432 65320 $$2Author$$aSi
000040432 65320 $$2Author$$aSiO2
000040432 7001_ $$0P:(DE-HGF)0$$aCoffa, S.$$b1
000040432 7001_ $$0P:(DE-Juel1)VDB4964$$aCarius, R.$$b2$$uFZJ
000040432 7001_ $$0P:(DE-Juel1)VDB5399$$aBuchal, C.$$b3$$uFZJ
000040432 773__ $$0PERI:(DE-600)1492109-1$$a10.1016/S0921-5107(00)00668-1$$gVol. 81, p. 102 - 104$$p102 - 104$$q81<102 - 104$$tMaterials science and engineering / B$$v81$$x0921-5107$$y2001
000040432 909CO $$ooai:juser.fz-juelich.de:40432$$pVDB
000040432 9131_ $$0G:(DE-Juel1)FUEK67$$bInformationstechnik$$k29.87.0$$lGrundlagenforschung zur Informationstechnik$$vIonentechnik$$x0
000040432 9131_ $$0G:(DE-Juel1)FUEK70$$bEnergietechnik$$k30.90.0$$lEnergieumwandlungstechniken$$vGrundlagen und Technologie von Dünnschichtsolarzellen$$x1
000040432 9141_ $$y2001
000040432 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000040432 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x0
000040432 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x1
000040432 970__ $$aVDB:(DE-Juel1)5423
000040432 980__ $$aVDB
000040432 980__ $$aConvertedRecord
000040432 980__ $$ajournal
000040432 980__ $$aI:(DE-Juel1)PGI-9-20110106
000040432 980__ $$aI:(DE-Juel1)IEK-5-20101013
000040432 980__ $$aUNRESTRICTED
000040432 981__ $$aI:(DE-Juel1)IMD-3-20101013
000040432 981__ $$aI:(DE-Juel1)PGI-9-20110106
000040432 981__ $$aI:(DE-Juel1)IEK-5-20101013