TY  - JOUR
AU  - Wang, S.
AU  - Coffa, S.
AU  - Carius, R.
AU  - Buchal, C.
TI  - Efficient electroluminescence from rare earth doped MOS diodes
JO  - Materials science and engineering / B
VL  - 81
SN  - 0921-5107
CY  - New York, NY [u.a.]
PB  - Elsevier
M1  - PreJuSER-40432
SP  - 102 - 104
PY  - 2001
N1  - Record converted from VDB: 12.11.2012
AB  - Efficient infra-red and visible electroluminescence (EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV cm(-1). The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated at 10 and 3%, respectively. The high quantum efficiency is due to the high impact excitation cross-section > 10(-15) cm(-2). These observations on MOS structures are an experimental pl oof for efficient light generation by hot electron impact. (C) 2001 Elsevier Science B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000168392800026
DO  - DOI:10.1016/S0921-5107(00)00668-1
UR  - https://juser.fz-juelich.de/record/40432
ER  -