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| 001 | 40432 | ||
| 005 | 20240708133741.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/S0921-5107(00)00668-1 |
| 024 | 7 | _ | |2 WOS |a WOS:000168392800026 |
| 037 | _ | _ | |a PreJuSER-40432 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 600 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Wang, S. |0 P:(DE-Juel1)VDB5833 |b 0 |u FZJ |
| 245 | _ | _ | |a Efficient electroluminescence from rare earth doped MOS diodes |
| 260 | _ | _ | |a New York, NY [u.a.] |b Elsevier |c 2001 |
| 300 | _ | _ | |a 102 - 104 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Materials Science and Engineering B |x 0921-5107 |0 4204 |v 81 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Efficient infra-red and visible electroluminescence (EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV cm(-1). The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated at 10 and 3%, respectively. The high quantum efficiency is due to the high impact excitation cross-section > 10(-15) cm(-2). These observations on MOS structures are an experimental pl oof for efficient light generation by hot electron impact. (C) 2001 Elsevier Science B.V. All rights reserved. |
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| 536 | _ | _ | |a Grundlagen und Technologie von Dünnschichtsolarzellen |c 30.90.0 |0 G:(DE-Juel1)FUEK70 |x 1 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a rare earths |
| 653 | 2 | 0 | |2 Author |a luminescence |
| 653 | 2 | 0 | |2 Author |a Si |
| 653 | 2 | 0 | |2 Author |a SiO2 |
| 700 | 1 | _ | |a Coffa, S. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Carius, R. |0 P:(DE-Juel1)VDB4964 |b 2 |u FZJ |
| 700 | 1 | _ | |a Buchal, C. |0 P:(DE-Juel1)VDB5399 |b 3 |u FZJ |
| 773 | _ | _ | |a 10.1016/S0921-5107(00)00668-1 |g Vol. 81, p. 102 - 104 |p 102 - 104 |q 81<102 - 104 |0 PERI:(DE-600)1492109-1 |t Materials science and engineering / B |v 81 |y 2001 |x 0921-5107 |
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| 913 | 1 | _ | |k 30.90.0 |v Grundlagen und Technologie von Dünnschichtsolarzellen |l Energieumwandlungstechniken |b Energietechnik |0 G:(DE-Juel1)FUEK70 |x 1 |
| 914 | 1 | _ | |y 2001 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB41 |x 0 |
| 920 | 1 | _ | |k IPV |l Institut für Photovoltaik |d 31.12.2006 |g IPV |0 I:(DE-Juel1)VDB46 |x 1 |
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| 980 | _ | _ | |a VDB |
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| 980 | _ | _ | |a UNRESTRICTED |
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