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017 _ _ |a This version is available at the following Publisher URL: http://prb.aps.org
024 7 _ |a 10.1103/PhysRevB.70.155313
|2 DOI
024 7 _ |a WOS:000224855900055
|2 WOS
024 7 _ |a 2128/1379
|2 Handle
037 _ _ |a PreJuSER-40600
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Höhler, H.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB21442
245 _ _ |a Cd-vacancy and Cd-interstitial complexes in Si and Ge
260 _ _ |a College Park, Md.
|b APS
|c 2004
300 _ _ |a 155313
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Physical Review B
|x 1098-0121
|0 4919
|v 70
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The electrical-field gradient (EFG), measured, e.g., in perturbed angular correlation experiments, gives particularly useful information about the interaction of probe atoms like In-111/Cd-111 with other defects. The interpretation of the EFG is, however, a difficult task. This paper aims at understanding the interaction of Cd impurities with vacancies and interstitials in Si and Ge, which represents a controversial issue. We apply two complementary ab initio methods in the framework of density-functional theory, (i) the all electron Korringa-Kohn-Rostoker Green function method and (ii) the pseudopotential-plane-wave method, to search for the correct local geometry. Surprisingly we find that both in Si and Ge the substitutional Cd-vacancy complex is unstable and relaxes to a split-vacancy complex with the Cd on the bond-center site. This complex has a very small EFG, allowing a unique assignment of the small measured EFGs of 54 MHz in Ge and 28 MHz in Si. Also, for the Cd-self-interstitial complex we obtain a highly symmetrical split configuration with large EFG's, being in reasonable agreement with experiments.
536 _ _ |a Kondensierte Materie
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542 _ _ |i 2004-10-18
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588 _ _ |a Dataset connected to Web of Science
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700 1 _ |a Atodiresei, N.
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700 1 _ |a Schroeder, K.
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700 1 _ |a Zeller, R.
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700 1 _ |a Dederichs, P. H.
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773 1 8 |a 10.1103/physrevb.70.155313
|b American Physical Society (APS)
|d 2004-10-18
|n 15
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|t Physical Review B
|v 70
|y 2004
|x 1098-0121
773 _ _ |a 10.1103/PhysRevB.70.155313
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|p 155313
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|0 PERI:(DE-600)2844160-6
|t Physical review / B
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevB.70.155313
|u http://hdl.handle.net/2128/1379
856 4 _ |u https://juser.fz-juelich.de/record/40600/files/54726.pdf
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914 1 _ |y 2004
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920 1 _ |k IFF-TH-I
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999 C 5 |a 10.1103/PhysRevLett.80.2626
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999 C 5 |a 10.1007/BF02399880
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999 C 5 |a 10.1063/1.344188
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999 C 5 |a 10.1007/BF00617764
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999 C 5 |1 Th. Wichert
|y 1999
|2 Crossref
|t Semiconductors and Semimetals
|o Th. Wichert Semiconductors and Semimetals 1999
999 C 5 |a 10.1016/0168-583X(92)95198-Z
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|1 S. H. Vosko
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999 C 5 |a 10.1016/0031-8914(47)90013-X
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999 C 5 |a 10.1016/0038-1098(82)90641-X
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999 C 5 |a 10.1103/PhysRevLett.48.1425
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999 C 5 |a 10.1103/PhysRevB.50.17953
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999 C 5 |a 10.1103/PhysRevB.16.1748
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999 C 5 |a 10.1103/PhysRevB.55.9400
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