Journal Article

PreJuSER-40747

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Microcrystalline n-i-p solar cells deposited at 10 Angstrom/s by VHF-GD

Feitknecht, L. ; Kluth, O.FZJ* ; Ziegler, Y. ; Niquille, X. ; Torres, P. ; Meier, J. ; Wyrsch, N. ; Shah, A.

2001
North Holland Amsterdam

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Please use a persistent id in citations: doi:10.1016/S0927-0248(00)00200-2

Abstract: In the present paper, we report on thin-film microcrystalline silicon solar cells grown at high deposition rates on back-reflectors with optimised light-scattering capabilities. A single-junction solar cell with a conversion efficiency of eta = 7.8% (2 mum thickness) was fabricated at a deposition rate of 7.4 Angstrom /s. Another microcrystalline cell was successfully implemented in a 'micromorph" tandem (i.e. a microcrystalline/amorphous tandem cell with n-i-p-n-i-p configuration); the resulting initial conversion efficiency was eta = 11.2%. A 4 mum thick single-junction cell at a deposition rate of 10 Angstrom /s and with a conversion efficiency of eta = 6.9% was fabricated on a non-optimised substrate. Special attention is drawn to near-infrared spectral response and interface optimisation. (C) 2001 Elsevier Science B.V. All rights reserved.

Keyword(s): J ; microcrystalline silicon (auto) ; high deposition rate (auto) ; thin-film n-i-p solar cell (auto) ; VHF-GD (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)

Research Program(s):

1. Grundlagen und Technologie von Dünnschichtsolarzellen (30.90.0)

Appears in the scientific report 2001

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