%0 Journal Article
%A Oyoshi, A. N.
%A Lenssen, D.
%A Carius, R.
%A Mantl, S.
%T Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties
%J Thin solid films
%V 381
%@ 0040-6090
%C Amsterdam [u.a.]
%I Elsevier
%M PreJuSER-40797
%P 202 - 208
%D 2001
%Z Record converted from VDB: 12.11.2012
%X Iron-disilicide precipitates were formed by two different processes; (i) Fe+ ion implantation in Si and subsequent dry oxidation and (ii) Fe+ ion implantation at the interface of SiO2/Si and subsequent annealing. These samples were characterized by Rutherford backscattering spectrometry (RBS), transmission electron microscope (TEM), X-ray diffraction (XRD), photothermal deflection spectroscopy (PDS) and photoluminescence (PL). The implanted Fe concentrated at the SiO2/Si interface and formed beta -FeSi2 precipitates by both processes. However, part of the implanted Fe still remained in SiO2 and possibly formed Fe precipitates through the process (ii). It is notable that a clear interface has formed through the plc,cess (i) whereas a defect rich region was produced in Si near the Si/SiO2 interface by the process (ii). Weak optical absorption above 0.8 eV corresponding to the band gap of beta -FeSi2 was confirmed for both processes. It is noted that sharp PL was observed at 0.81 eV at 5 K for the sample (i) whereas broad PL was observed for the sample (ii). The origin of the FL was discussed from the: point of view of direct transition of strained beta -FeSi2, a shallow acceptor level in a non-intentionally doped p-type beta -FeSi2 and defect levels, in particular dislocations in Si. (C) 2001 Elsevier Science B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000166828900007
%R 10.1016/S0040-6090(00)01744-2
%U https://juser.fz-juelich.de/record/40797