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| Home > Publications database > Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties |
| Journal Article | PreJuSER-40797 |
; ; ;
2001
Elsevier
Amsterdam [u.a.]
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Please use a persistent id in citations: doi:10.1016/S0040-6090(00)01744-2
Abstract: Iron-disilicide precipitates were formed by two different processes; (i) Fe+ ion implantation in Si and subsequent dry oxidation and (ii) Fe+ ion implantation at the interface of SiO2/Si and subsequent annealing. These samples were characterized by Rutherford backscattering spectrometry (RBS), transmission electron microscope (TEM), X-ray diffraction (XRD), photothermal deflection spectroscopy (PDS) and photoluminescence (PL). The implanted Fe concentrated at the SiO2/Si interface and formed beta -FeSi2 precipitates by both processes. However, part of the implanted Fe still remained in SiO2 and possibly formed Fe precipitates through the process (ii). It is notable that a clear interface has formed through the plc,cess (i) whereas a defect rich region was produced in Si near the Si/SiO2 interface by the process (ii). Weak optical absorption above 0.8 eV corresponding to the band gap of beta -FeSi2 was confirmed for both processes. It is noted that sharp PL was observed at 0.81 eV at 5 K for the sample (i) whereas broad PL was observed for the sample (ii). The origin of the FL was discussed from the: point of view of direct transition of strained beta -FeSi2, a shallow acceptor level in a non-intentionally doped p-type beta -FeSi2 and defect levels, in particular dislocations in Si. (C) 2001 Elsevier Science B.V. All rights reserved.
Keyword(s): J ; beta-FeSi2 (auto) ; ion implantation (auto) ; precipitates (auto) ; PL (auto) ; PDS (auto) ; SiO2/Si interface (auto) ; TEM (auto) ; XRD (auto) ; RBS (auto) ; ion beam synthesis (auto)
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