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000040797 0247_ $$2DOI$$a10.1016/S0040-6090(00)01744-2
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000040797 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000040797 084__ $$2WoS$$aMaterials Science, Coatings & Films
000040797 084__ $$2WoS$$aPhysics, Applied
000040797 084__ $$2WoS$$aPhysics, Condensed Matter
000040797 1001_ $$0P:(DE-Juel1)VDB5788$$aOyoshi, A. N.$$b0$$uFZJ
000040797 245__ $$aFormation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties
000040797 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2001
000040797 300__ $$a202 - 208
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000040797 440_0 $$05762$$aThin Solid Films$$v381$$x0040-6090
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000040797 520__ $$aIron-disilicide precipitates were formed by two different processes; (i) Fe+ ion implantation in Si and subsequent dry oxidation and (ii) Fe+ ion implantation at the interface of SiO2/Si and subsequent annealing. These samples were characterized by Rutherford backscattering spectrometry (RBS), transmission electron microscope (TEM), X-ray diffraction (XRD), photothermal deflection spectroscopy (PDS) and photoluminescence (PL). The implanted Fe concentrated at the SiO2/Si interface and formed beta -FeSi2 precipitates by both processes. However, part of the implanted Fe still remained in SiO2 and possibly formed Fe precipitates through the process (ii). It is notable that a clear interface has formed through the plc,cess (i) whereas a defect rich region was produced in Si near the Si/SiO2 interface by the process (ii). Weak optical absorption above 0.8 eV corresponding to the band gap of beta -FeSi2 was confirmed for both processes. It is noted that sharp PL was observed at 0.81 eV at 5 K for the sample (i) whereas broad PL was observed for the sample (ii). The origin of the FL was discussed from the: point of view of direct transition of strained beta -FeSi2, a shallow acceptor level in a non-intentionally doped p-type beta -FeSi2 and defect levels, in particular dislocations in Si. (C) 2001 Elsevier Science B.V. All rights reserved.
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000040797 650_7 $$2WoSType$$aJ
000040797 65320 $$2Author$$abeta-FeSi2
000040797 65320 $$2Author$$aion implantation
000040797 65320 $$2Author$$aprecipitates
000040797 65320 $$2Author$$aPL
000040797 65320 $$2Author$$aPDS
000040797 65320 $$2Author$$aSiO2/Si interface
000040797 65320 $$2Author$$aTEM
000040797 65320 $$2Author$$aXRD
000040797 65320 $$2Author$$aRBS
000040797 65320 $$2Author$$aion beam synthesis
000040797 7001_ $$0P:(DE-Juel1)VDB5789$$aLenssen, D.$$b1$$uFZJ
000040797 7001_ $$0P:(DE-Juel1)VDB4964$$aCarius, R.$$b2$$uFZJ
000040797 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b3$$uFZJ
000040797 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/S0040-6090(00)01744-2$$gVol. 381, p. 202 - 208$$p202 - 208$$q381<202 - 208$$tThin solid films$$v381$$x0040-6090$$y2001
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000040797 9141_ $$y2001
000040797 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000040797 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x0
000040797 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x1
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