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@ARTICLE{Oyoshi:40797,
      author       = {Oyoshi, A. N. and Lenssen, D. and Carius, R. and Mantl, S.},
      title        = {{F}ormation of beta-{F}e{S}i2 precipitates at the
                      {S}i{O}2/{S}i interface by {F}e+ ion-implantation and their
                      structural and optical properties},
      journal      = {Thin solid films},
      volume       = {381},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-40797},
      pages        = {202 - 208},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Iron-disilicide precipitates were formed by two different
                      processes; (i) Fe+ ion implantation in Si and subsequent dry
                      oxidation and (ii) Fe+ ion implantation at the interface of
                      SiO2/Si and subsequent annealing. These samples were
                      characterized by Rutherford backscattering spectrometry
                      (RBS), transmission electron microscope (TEM), X-ray
                      diffraction (XRD), photothermal deflection spectroscopy
                      (PDS) and photoluminescence (PL). The implanted Fe
                      concentrated at the SiO2/Si interface and formed beta -FeSi2
                      precipitates by both processes. However, part of the
                      implanted Fe still remained in SiO2 and possibly formed Fe
                      precipitates through the process (ii). It is notable that a
                      clear interface has formed through the plc,cess (i) whereas
                      a defect rich region was produced in Si near the Si/SiO2
                      interface by the process (ii). Weak optical absorption above
                      0.8 eV corresponding to the band gap of beta -FeSi2 was
                      confirmed for both processes. It is noted that sharp PL was
                      observed at 0.81 eV at 5 K for the sample (i) whereas broad
                      PL was observed for the sample (ii). The origin of the FL
                      was discussed from the: point of view of direct transition
                      of strained beta -FeSi2, a shallow acceptor level in a
                      non-intentionally doped p-type beta -FeSi2 and defect
                      levels, in particular dislocations in Si. (C) 2001 Elsevier
                      Science B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IPV / ISG-1},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB46 / I:(DE-Juel1)VDB41},
      pnm          = {Grundlagen und Technologie von Dünnschichtsolarzellen /
                      Ionentechnik},
      pid          = {G:(DE-Juel1)FUEK70 / G:(DE-Juel1)FUEK67},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000166828900007},
      doi          = {10.1016/S0040-6090(00)01744-2},
      url          = {https://juser.fz-juelich.de/record/40797},
}