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| Hauptseite > Publikationsdatenbank > Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties > print |
| Hauptseite > Publikationsdatenbank > Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties > print |
| 001 | 40797 | ||
| 005 | 20240708133745.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/S0040-6090(00)01744-2 |
| 024 | 7 | _ | |2 WOS |a WOS:000166828900007 |
| 037 | _ | _ | |a PreJuSER-40797 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 070 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Materials Science, Coatings & Films |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Oyoshi, A. N. |0 P:(DE-Juel1)VDB5788 |b 0 |u FZJ |
| 245 | _ | _ | |a Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 2001 |
| 300 | _ | _ | |a 202 - 208 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Thin Solid Films |x 0040-6090 |0 5762 |v 381 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Iron-disilicide precipitates were formed by two different processes; (i) Fe+ ion implantation in Si and subsequent dry oxidation and (ii) Fe+ ion implantation at the interface of SiO2/Si and subsequent annealing. These samples were characterized by Rutherford backscattering spectrometry (RBS), transmission electron microscope (TEM), X-ray diffraction (XRD), photothermal deflection spectroscopy (PDS) and photoluminescence (PL). The implanted Fe concentrated at the SiO2/Si interface and formed beta -FeSi2 precipitates by both processes. However, part of the implanted Fe still remained in SiO2 and possibly formed Fe precipitates through the process (ii). It is notable that a clear interface has formed through the plc,cess (i) whereas a defect rich region was produced in Si near the Si/SiO2 interface by the process (ii). Weak optical absorption above 0.8 eV corresponding to the band gap of beta -FeSi2 was confirmed for both processes. It is noted that sharp PL was observed at 0.81 eV at 5 K for the sample (i) whereas broad PL was observed for the sample (ii). The origin of the FL was discussed from the: point of view of direct transition of strained beta -FeSi2, a shallow acceptor level in a non-intentionally doped p-type beta -FeSi2 and defect levels, in particular dislocations in Si. (C) 2001 Elsevier Science B.V. All rights reserved. |
| 536 | _ | _ | |a Grundlagen und Technologie von Dünnschichtsolarzellen |c 30.90.0 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK70 |x 0 |
| 536 | _ | _ | |a Ionentechnik |c 29.87.0 |0 G:(DE-Juel1)FUEK67 |x 1 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a beta-FeSi2 |
| 653 | 2 | 0 | |2 Author |a ion implantation |
| 653 | 2 | 0 | |2 Author |a precipitates |
| 653 | 2 | 0 | |2 Author |a PL |
| 653 | 2 | 0 | |2 Author |a PDS |
| 653 | 2 | 0 | |2 Author |a SiO2/Si interface |
| 653 | 2 | 0 | |2 Author |a TEM |
| 653 | 2 | 0 | |2 Author |a XRD |
| 653 | 2 | 0 | |2 Author |a RBS |
| 653 | 2 | 0 | |2 Author |a ion beam synthesis |
| 700 | 1 | _ | |a Lenssen, D. |0 P:(DE-Juel1)VDB5789 |b 1 |u FZJ |
| 700 | 1 | _ | |a Carius, R. |0 P:(DE-Juel1)VDB4964 |b 2 |u FZJ |
| 700 | 1 | _ | |a Mantl, S. |0 P:(DE-Juel1)VDB4959 |b 3 |u FZJ |
| 773 | _ | _ | |a 10.1016/S0040-6090(00)01744-2 |g Vol. 381, p. 202 - 208 |p 202 - 208 |q 381<202 - 208 |0 PERI:(DE-600)1482896-0 |t Thin solid films |v 381 |y 2001 |x 0040-6090 |
| 909 | C | O | |o oai:juser.fz-juelich.de:40797 |p VDB |
| 913 | 1 | _ | |k 30.90.0 |v Grundlagen und Technologie von Dünnschichtsolarzellen |l Energieumwandlungstechniken |b Energietechnik |0 G:(DE-Juel1)FUEK70 |x 0 |
| 913 | 1 | _ | |k 29.87.0 |v Ionentechnik |l Grundlagenforschung zur Informationstechnik |b Informationstechnik |0 G:(DE-Juel1)FUEK67 |x 1 |
| 914 | 1 | _ | |y 2001 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IPV |l Institut für Photovoltaik |d 31.12.2006 |g IPV |0 I:(DE-Juel1)VDB46 |x 0 |
| 920 | 1 | _ | |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB41 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)5532 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)IMD-3-20101013 |
| 981 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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