%0 Journal Article
%A Schuller, B.
%A Carius, R.
%A Mantl, S.
%T Optical properties of beta-FeSi2 precipitate layers in silicon
%J Optical materials
%V 17
%@ 0925-3467
%C Amsterdam [u.a.]
%I Elsevier Science
%M PreJuSER-40810
%P 121 - 124
%D 2001
%Z Record converted from VDB: 12.11.2012
%X Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon. Photoluminescence measurements at 6 K show intense luminescence at 0.8 eV. To investigate the character of the optical transition responsible for the 0.8 eV luminescence, a system for time-dependent luminescence measurements in the near infrared with a time resolution of better than 30 ns and single photon counting capability has been set up. First measurements on our samples showed a photoluminescence decay time of 35 mus at 20 K, which decreased to 7 mus at 77 K. (C) 2001 Elsevier Science B.V. All rights reserved. .
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000169788700028
%R 10.1016/S0925-3467(01)00033-7
%U https://juser.fz-juelich.de/record/40810