Journal Article

PreJuSER-40810

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Optical properties of beta-FeSi2 precipitate layers in silicon

Schuller, B.FZJ* ; Carius, R.FZJ* ; Mantl, S.FZJ*

2001
Elsevier Science Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/S0925-3467(01)00033-7

Abstract: Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon. Photoluminescence measurements at 6 K show intense luminescence at 0.8 eV. To investigate the character of the optical transition responsible for the 0.8 eV luminescence, a system for time-dependent luminescence measurements in the near infrared with a time resolution of better than 30 ns and single photon counting capability has been set up. First measurements on our samples showed a photoluminescence decay time of 35 mus at 20 K, which decreased to 7 mus at 77 K. (C) 2001 Elsevier Science B.V. All rights reserved. .

Keyword(s): J ; semiconducting iron disilicide (auto) ; beta-FeSi2 (auto) ; photoluminescence (auto) ; decay time (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)
2. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Grundlagen und Technologie von Dünnschichtsolarzellen (30.90.0)

Appears in the scientific report 2001

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