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000040810 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000040810 084__ $$2WoS$$aOptics
000040810 1001_ $$0P:(DE-Juel1)132261$$aSchuller, B.$$b0$$uFZJ
000040810 245__ $$aOptical properties of beta-FeSi2 precipitate layers in silicon
000040810 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2001
000040810 300__ $$a121 - 124
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000040810 440_0 $$04730$$aOptical Materials$$v17$$x0925-3467
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000040810 520__ $$aSemiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon. Photoluminescence measurements at 6 K show intense luminescence at 0.8 eV. To investigate the character of the optical transition responsible for the 0.8 eV luminescence, a system for time-dependent luminescence measurements in the near infrared with a time resolution of better than 30 ns and single photon counting capability has been set up. First measurements on our samples showed a photoluminescence decay time of 35 mus at 20 K, which decreased to 7 mus at 77 K. (C) 2001 Elsevier Science B.V. All rights reserved. .
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000040810 65320 $$2Author$$asemiconducting iron disilicide
000040810 65320 $$2Author$$abeta-FeSi2
000040810 65320 $$2Author$$aphotoluminescence
000040810 65320 $$2Author$$adecay time
000040810 7001_ $$0P:(DE-Juel1)VDB4964$$aCarius, R.$$b1$$uFZJ
000040810 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b2$$uFZJ
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000040810 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x0
000040810 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x1
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