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@ARTICLE{Schuller:40810,
author = {Schuller, B. and Carius, R. and Mantl, S.},
title = {{O}ptical properties of beta-{F}e{S}i2 precipitate layers
in silicon},
journal = {Optical materials},
volume = {17},
issn = {0925-3467},
address = {Amsterdam [u.a.]},
publisher = {Elsevier Science},
reportid = {PreJuSER-40810},
pages = {121 - 124},
year = {2001},
note = {Record converted from VDB: 12.11.2012},
abstract = {Semiconducting iron disilicide precipitates have been
fabricated by ion beam synthesis in silicon.
Photoluminescence measurements at 6 K show intense
luminescence at 0.8 eV. To investigate the character of the
optical transition responsible for the 0.8 eV luminescence,
a system for time-dependent luminescence measurements in the
near infrared with a time resolution of better than 30 ns
and single photon counting capability has been set up. First
measurements on our samples showed a photoluminescence decay
time of 35 mus at 20 K, which decreased to 7 mus at 77 K.
(C) 2001 Elsevier Science B.V. All rights reserved. .},
keywords = {J (WoSType)},
cin = {IPV / ISG-1},
ddc = {530},
cid = {I:(DE-Juel1)VDB46 / I:(DE-Juel1)VDB41},
pnm = {Grundlagen und Technologie von Dünnschichtsolarzellen},
pid = {G:(DE-Juel1)FUEK70},
shelfmark = {Materials Science, Multidisciplinary / Optics},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000169788700028},
doi = {10.1016/S0925-3467(01)00033-7},
url = {https://juser.fz-juelich.de/record/40810},
}