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| Hauptseite > Publikationsdatenbank > Optical properties of beta-FeSi2 precipitate layers in silicon > print |
| Hauptseite > Publikationsdatenbank > Optical properties of beta-FeSi2 precipitate layers in silicon > print |
| 001 | 40810 | ||
| 005 | 20240708133745.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/S0925-3467(01)00033-7 |
| 024 | 7 | _ | |2 WOS |a WOS:000169788700028 |
| 037 | _ | _ | |a PreJuSER-40810 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Optics |
| 100 | 1 | _ | |a Schuller, B. |0 P:(DE-Juel1)132261 |b 0 |u FZJ |
| 245 | _ | _ | |a Optical properties of beta-FeSi2 precipitate layers in silicon |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier Science |c 2001 |
| 300 | _ | _ | |a 121 - 124 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Optical Materials |x 0925-3467 |0 4730 |v 17 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon. Photoluminescence measurements at 6 K show intense luminescence at 0.8 eV. To investigate the character of the optical transition responsible for the 0.8 eV luminescence, a system for time-dependent luminescence measurements in the near infrared with a time resolution of better than 30 ns and single photon counting capability has been set up. First measurements on our samples showed a photoluminescence decay time of 35 mus at 20 K, which decreased to 7 mus at 77 K. (C) 2001 Elsevier Science B.V. All rights reserved. . |
| 536 | _ | _ | |a Grundlagen und Technologie von Dünnschichtsolarzellen |c 30.90.0 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK70 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a semiconducting iron disilicide |
| 653 | 2 | 0 | |2 Author |a beta-FeSi2 |
| 653 | 2 | 0 | |2 Author |a photoluminescence |
| 653 | 2 | 0 | |2 Author |a decay time |
| 700 | 1 | _ | |a Carius, R. |0 P:(DE-Juel1)VDB4964 |b 1 |u FZJ |
| 700 | 1 | _ | |a Mantl, S. |0 P:(DE-Juel1)VDB4959 |b 2 |u FZJ |
| 773 | _ | _ | |a 10.1016/S0925-3467(01)00033-7 |g Vol. 17, p. 121 - 124 |p 121 - 124 |q 17<121 - 124 |0 PERI:(DE-600)2015659-5 |t Optical materials |v 17 |y 2001 |x 0925-3467 |
| 909 | C | O | |o oai:juser.fz-juelich.de:40810 |p VDB |
| 913 | 1 | _ | |k 30.90.0 |v Grundlagen und Technologie von Dünnschichtsolarzellen |l Energieumwandlungstechniken |b Energietechnik |0 G:(DE-Juel1)FUEK70 |x 0 |
| 914 | 1 | _ | |y 2001 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IPV |l Institut für Photovoltaik |d 31.12.2006 |g IPV |0 I:(DE-Juel1)VDB46 |x 0 |
| 920 | 1 | _ | |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB41 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)5539 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)IMD-3-20101013 |
| 981 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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